W.I. Wang, E. Mendez, et al.
IEEE T-ED
Paper
Heterojunction field-effect transistors based on AlGaSb/InAs
Abstract
We have fabricated the first InAs-channel field-effect transistor, which shows a transconductance of 180 mS/mm at 1 V drain-source bias (77 K). An improved buffer layer could significantly improve the device performance. In addition, we propose a new broken-gap heterojunction field-effect transistor based on these materials that could provide an order of magnitude higher transconductance compared to existing device configurations based on AlGaAs/GaAs.
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