Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have shown by magnetotunneling spectroscopy that at certain magnetic fields the Landé factor g of two-dimensional electrons is significantly enhanced relative to its three-dimensional value. The experiments were done using GaSbAlSbInAsAlSbGaSb heterostructures, in which a two-dimensional electron gas in the InAs layer is probed by holes from the GaSb electrodes tunneling in and out of it. The field dependence of the g factor is accounted for by the exchange interaction between electrons of the same spin. © 1994.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R. Ghez, J.S. Lew
Journal of Crystal Growth
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
M. Hargrove, S.W. Crowder, et al.
IEDM 1998