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Solid State Electronics
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Observation by spin-resolved resonant magnetotunneling of oscillatory Landé factor in two-dimensional electron systems

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We have shown by magnetotunneling spectroscopy that at certain magnetic fields the Landé factor g of two-dimensional electrons is significantly enhanced relative to its three-dimensional value. The experiments were done using GaSbAlSbInAsAlSbGaSb heterostructures, in which a two-dimensional electron gas in the InAs layer is probed by holes from the GaSb electrodes tunneling in and out of it. The field dependence of the g factor is accounted for by the exchange interaction between electrons of the same spin. © 1994.

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Solid State Electronics

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