Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs

Abstract

Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ION-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Accélérateur National d'Ions Lourds, Caen, France, and the University of Jyväskylä, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET. © 2009 IEEE.