Surface processes in plasma-assisted etching
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
A GaAs 〈001〉 crystal at room temperature has been exposed to a flux of hydrogen atoms with and without simultaneous 2-keV argon ion bombardment. A modulated molecular beam mass spectrometric detection system is used to monitor the volatile products evolved from the surface, and in situ Auger electron spectroscopy is used to monitor the surface conditions. With the H atom flux alone no volatile products were observed but an arsenic deficiency was seen with Auger electron spectroscopy. With simultaneous H atom exposure and Ar+ bombardment, arsenic hydrides were observed with the mass spectrometer and a larger arsenic deficiency was observed on the processed surface. No gallium hydrides were observed at any time.
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
J.W. Coburn
Review of Scientific Instruments
J.W. Coburn, Harold F. Winters
Applications of Surface Science
J.W. Coburn, Eric Kay
Applied Physics Letters