About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Electron-beam effects in depth profiling measurements with Auger electron spectroscopy
Abstract
Ion-beam sputter etching and simultaneous Auger electron spectroscopy have been used to obtain elemental composition profiles on some electrically insulating samples. It has been noted that the effective sputter-etch rate is substantially larger on that part of the sample area which is irradiated by the incident electron beam than on the area which is subjected to ion bombardment only. This effect, which adversely influences the depth resolution of the method, is attributed to electron-stimulated desorption of the surface oxygen which in turn causes enhanced sputtering in the electron irradiated area.