Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
We have developed an approach to grow high quality ultra-thin films of La2-xSrxCuO4 with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La 1.9Sr0.1CuO4 film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO4 substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth λ ab(0) = 535 nm. © 2003 Elsevier Ltd. All rights reserved.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989