Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy

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Spontaneous nanowire (NW) formation in the Ti/Si(111) system was followed and found to occur during reactive epitaxy at T∼850°C. Dynamic observations show that the rate-limiting kinetic step during both growth and shrinking of the NWs is the silicide reaction at the island ends.