M.V. Fischetti, S.E. Laux
IEDM 1995
Several techniques have been proposed to determine the channel length and series resistance of MOSFET's. Numerical simulations show that these algorithms must carefully account for two-dimensional geometry effects in order to extract parameters which are physically meaningful. New techniques which take these effects into account are proposed for extracting the channel length and series resistance. © 1985 IEEE
M.V. Fischetti, S.E. Laux
IEDM 1995
J. Freeouf, T.N. Jackson, et al.
Applied Physics Letters
D.S. Wen, C.C.-H. Hsu, et al.
IEDM 1989
S.E. Laux
IWCE 2009