Conference paper
Transient effects in floating body SOI NMOSFET's
J. Gautier, Keith A. Jenkins, et al.
IEEE International SOI Conference 1995
Several techniques have been proposed to determine the channel length and series resistance of MOSFET's. Numerical simulations show that these algorithms must carefully account for two-dimensional geometry effects in order to extract parameters which are physically meaningful. New techniques which take these effects into account are proposed for extracting the channel length and series resistance. © 1985 IEEE
J. Gautier, Keith A. Jenkins, et al.
IEEE International SOI Conference 1995
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Journal of Computational Electronics
S.E. Laux, Alan C. Warren
IEDM 1985
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Applied Physics Letters