William L. Warren, F. Christopher Rong, et al.
Journal of Applied Physics
The characteristics of glow-discharge hydrogenated amorphous silicon-silicon nitride (a-Si/a-SiNx) thin-film transistors (TFTs) are reported for various deposition conditions. TFTs incorporating a N-rich nitride gate dielectric, a-SiN1.6, are superior to a-Si TFTs with a Si-rich gate nitride, a-SiN1.2. In particular, the N-rich gate nitride TFTs show considerably less interface or near-interface charging during operation, improved stability, and a higher field-effect mobility. The average field-effect mobility μFE is found to be 0.27 and 0.41 cm2/V s for the Si- and N-rich gate nitride TFTs, respectively. A further improvement in mobility, μFE =0.61 cm 2/V s, is achieved by increasing the N-rich gate nitride deposition temperature from 250 to 450 °C. These results suggest that N-rich a-SiN x, deposited at elevated temperatures, yields a more abrupt or "cleaner" a-SiNx/a-Si interface. We also show, for the first time, that using n+ μc-Si source-drain contacts in place of n+ a-Si improves device performance, yielding an average field-effect mobility of 0.84 cm2/V s, with an activation energy of 0.069 eV.
William L. Warren, F. Christopher Rong, et al.
Journal of Applied Physics
Naftali Lustig, Masanori Murakami, et al.
Applied Physics Letters
Scan Bums, Dirk Pfeiffer, et al.
SPIE Advanced Lithography 2006
Wei-Tsu Tseng, Vamsi Devarapalli, et al.
IEEE Trans Semicond Manuf