S. Raoux, H.Y. Cheng, et al.
Applied Physics Letters
In this paper, gate current injection into the gate oxide of MOSFET's with a split-gate (virtual drain) structure is examined. The split-gate structure is commonly encountered in flash EEPROM and CCD's. An important parameter characterizing the gate current injection is the ratio φb/φi (where φb is the effective energy barrier for electron injection into gate oxide, and φi is the impact ionization energy). We present new experimental data of the ratio φb/φi measured at relatively constant vertical and lateral electric fields. Through the use of a novel triple-gate MOSFET, the drain current as well as the lateral and vertical electric fields at the point of injection were independently controlled during the measurements. The measured φb/φi showed a dependence on gate and drain biases not reported previously.
S. Raoux, H.Y. Cheng, et al.
Applied Physics Letters
H.-S. Wong, Ying L. Yao, et al.
IBM J. Res. Dev
K. Rim, S.J. Koester, et al.
VLSI Technology 2001
E.C. Jones, M. Ieong, et al.
DRC 2001