Abstract
We have made transport measurements on GaSbAlSbInAs multi-heterojunctions prepared by MBE. The result has been analyzed on the basis of electron tunneling across thin AlSb layers. © 1983.
We have made transport measurements on GaSbAlSbInAs multi-heterojunctions prepared by MBE. The result has been analyzed on the basis of electron tunneling across thin AlSb layers. © 1983.