About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Ga1-x Alx As superlattices profiled by auger electron spectroscopy
Abstract
Superlattice structures made by molecular beam epitaxy are profiled by a combined technique of argon sputter etching and Auger electron spectroscopy. The superlattice, consisting of periodic layers of 50-Å GaAs and Ga 1-xAlxAs, probably represents the structure with the shortest period ever made and analyzed in monocrystalline semiconductors. Also established is the dependence of the intensity ratio of aluminum to arsenic signals of Auger transitions on the aluminum composition in Ga 1-xAlxAs. © 1974 American Institute of Physics.