J.A. Van Vechten, J.M. Blum, et al.
IEEE T-ED
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
J.A. Van Vechten, J.M. Blum, et al.
IEEE T-ED
R.J. Matyi, M.R. Melloch, et al.
Journal of Crystal Growth
M.H. Pilkuhn, H. Rupprecht, et al.
Proceedings of the IEEE
L.J. Brillson, I.M. Vitomirov, et al.
Applied Surface Science