M.R. Melloch, J. Woodall, et al.
Materials Science and Engineering B
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
M.R. Melloch, J. Woodall, et al.
Materials Science and Engineering B
C.W. Wilmsen, Alan C. Warren, et al.
JES
M.R. Melloch, N. Otsuka, et al.
Journal of Applied Physics
E.A. Fitzgerald, G.P. Watson, et al.
Journal of Applied Physics