About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Formation of palladium silicide in the presence of Al with and without a carbon barrier layer
Abstract
The formation of Pd silicides in the presence of an Al layer is studied using Al/Pd/Si structures with and without a carbon barrier layer between the Al and Pd layers. Both the reactions between Al and Pd and between Pd and Si start around 200°C, forming Pd2Al3 and Pd2Si, respectively. At higher temperatures, the excess Al present reacts with the Pd2Si formed, converting the latter to Pd2Al3 which is completed at 400°C. In the presence of a carbon barrier layer using an Al/C/Pd/Si structure, the Pd2Si formed stays little changed up to an anneal of 30 min at 500°C. The Pd2Si formed reacts with the Al present at higher temperatures, about two-thirds reacted after an anneal at 550°C, and nearly completely reacted after an anneal at 600°C, both for 30 min. The effectiveness of the carbon barrier layer for the Al/Pd 2Si reaction is compared with that for the Al/PtSi reaction, where little reaction is observed after an anneal of 30 min at 600°C. Application of the carbon barrier layer to device contact metallurgies is also discussed.