Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles density-functional calculations. Energetics, structures, charge-state levels, and hyperfine parameters are determined. These calculations identify the hydrogen bridge related to the E41 center as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown of gate oxides in transistors.
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Sung Ho Kim, Oun-Ho Park, et al.
Small
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Imran Nasim, Melanie Weber
SCML 2024