Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles density-functional calculations. Energetics, structures, charge-state levels, and hyperfine parameters are determined. These calculations identify the hydrogen bridge related to the E41 center as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown of gate oxides in transistors.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting