K.N. Tu
Materials Science and Engineering: A
Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles density-functional calculations. Energetics, structures, charge-state levels, and hyperfine parameters are determined. These calculations identify the hydrogen bridge related to the E41 center as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown of gate oxides in transistors.
K.N. Tu
Materials Science and Engineering: A
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Lawrence Suchow, Norman R. Stemple
JES
Ronald Troutman
Synthetic Metals