Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator

Abstract

Insulated-gate field-effect transistors (IGFETs) comprising molecular beam deposited α,ω-di-hexyl-hexathienylene (DH6T) as the semiconductor layer and different polymeric gate insulators were fabricated and tested. Field-effect mobility values up to 0.13 cm2 V-1 s-1 were obtained, which are the highest values obtained from thin-film transistors of DH6T. © 1998 Published by Elsevier Science S.A.