Conference paper
Degradation of thin SiO 2 gate oxides by atomic hydrogen
F. Cartier, D.J. DiMaria, et al.
DRC 1994
The polarity dependence observed for destructive breakdown of ultrathin silicon dioxide films is shown to be directly correlated to the oxide degradation caused by hot-electron-induced defect production. The probability of defect generation is also demonstrated to depend on the Fermi level position at the anode/oxide interface. The specific anode interface, whether substrate/oxide or gate/oxide, is shown to have no direct relationship to the degradation rate. © 1996 American Institute of Physics.
F. Cartier, D.J. DiMaria, et al.
DRC 1994
D.J. DiMaria, M.V. Fischetti, et al.
Physical Review Letters
P.C. Arnett, D.J. DiMaria
Applied Physics Letters
D.J. DiMaria, E. Cartier, et al.
Journal of Applied Physics