Publication
Journal of Applied Physics
Paper

Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K

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Abstract

Sodium ions in the SiO2 layer of MOS structures have been completely neutralized at liquid-nitrogen temperatures (77 °K) by avalanche injection of electrons from the Si substrate. Three principal electron capture cross sections (2×10-15, 2×10-19, and 5×10-20 cm2) associated with ionic sodium (Na +) contamination have been observed.

Date

28 Aug 2008

Publication

Journal of Applied Physics

Authors

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