Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K

D.J. DiMaria; J.M. Aitken; D.R. Young

doi:10.1063/1.322998

Journal of Applied Physics

Paper

28 Aug 2008

Capture of electrons into Na⁺-related trapping sites in the SiO₂ layer of MOS structures at 77 °K

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Abstract

Sodium ions in the SiO2 layer of MOS structures have been completely neutralized at liquid-nitrogen temperatures (77 °K) by avalanche injection of electrons from the Si substrate. Three principal electron capture cross sections (2×10-15, 2×10-19, and 5×10-20 cm2) associated with ionic sodium (Na +) contamination have been observed.

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Abstract

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