Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Both photon-assisted-tunneling and internal photoemission measurements have been made on the same metal-oxide-semiconductor samples. The effective barrier heights between the metal (Al or Au) and the oxide (SiO2) extracted from the internal photoemission measurements are found to be larger by 0.3 eV than the effective barrier heights extracted from the photon-assisted-tunneling measurements. Only the quantum-mechanical image-force theory is capable of explaining this result. © 1982 The American Physical Society.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
T.N. Morgan
Semiconductor Science and Technology
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films