Publication
Solid State Communications
Paper

Experimental band structure E( k r) of V3Si by angle-resolved photoemission

View publication

Abstract

Band dispersions E(k) and critical points of V3Si have been determined by k-selective angle-resolved photoemission with synchrotron radiation. A V-3d band (Δ1,2) which is very close to EF at Γ (Γ12) has been observed which is very flat near Γ along the ΓX direction, in agreement with recent APW calculations. Critical points of valence bands as well as their orbital character and density of states features have been determined. © 1981.

Date

01 Jan 1981

Publication

Solid State Communications

Authors

Topics

Share