Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Band dispersions E(k) and critical points of V3Si have been determined by k-selective angle-resolved photoemission with synchrotron radiation. A V-3d band (Δ1,2) which is very close to EF at Γ (Γ12) has been observed which is very flat near Γ along the ΓX direction, in agreement with recent APW calculations. Critical points of valence bands as well as their orbital character and density of states features have been determined. © 1981.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
K.N. Tu
Materials Science and Engineering: A
A. Gangulee, F.M. D'Heurle
Thin Solid Films