Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

View publication

Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and Al_xGa_1-xAs growth

J.W. Huang, D.F. Gaines, et al.

Journal of Electronic Materials

Paper

Disorder in Al-Li-Cu and Al-Mn-Si icosahedral alloys

P.A. Heiney, P.A. Bancel, et al.

Science

Paper

Flash X-ray microscopy

R.A. McCorkle, J. Angilello, et al.

Science

Paper

Tantalum silicide films deposited by dc sputtering

J. Angilello, J.E.E. Baglin, et al.

Journal of Electronic Materials

View all publications

Abstract

Related

Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1-xAs growth

Disorder in Al-Li-Cu and Al-Mn-Si icosahedral alloys

Flash X-ray microscopy

Tantalum silicide films deposited by dc sputtering

Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and Al_xGa_1-xAs growth