Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
The effective thickness of the amorphous chalcogenide part within the active element of a phase-change memory cell is estimated through electrical measurements. Current-voltage characteristics obtained at various intermediate cell states are fitted with the trap-limited subthreshold transport model of [9] and the amorphous part thickness is then extracted. Several cell electrical measures, such as the resistance and the threshold voltage, are shown to closely relate to the estimated parameter. The results serve to further validate the trap-limited conduction model, as well as the series phase distribution hypothesis in the active layer of a phase-change memory cell. © 2010 Elsevier Ltd.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000