Publication
Materials Letters
Paper

Epitaxial growth of PbTe on (100) GaAs substrates

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Abstract

The growth of PbTe films on GaAs by molecular beam epitaxy was studied by reflection high energy diffraction. The strains in the films were investigated by X-ray diffraction. Despite a lattice mismatch of 14.2%, oriented films can be grown up to a thickness of 4000 Å. For thicker films the thermal strain causes cracks if the samples are cooled from growth to liquid-nitrogen temperature. © 1988.

Date

01 Jan 1988

Publication

Materials Letters

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