Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The oxidation of Si(100) surfaces covered with 3 AÌScaron; Ce was studied by high-resolution photoemission spectroscopy. The oxygen uptake was found to be enhanced by orders of magnitude by the presence of Ce. Because of chemical reaction between Ce and Si, a mixed oxide with a Ce:Si composition ratio of 1:1:3 is formed. The sharp photoemission spectra of this oxide indicate the formation of a well-defined compound in which both Ce and Si are in a 3+ oxidation state. © 1986 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Ming L. Yu
Physical Review B
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings