Electronic properties of InAsGaSb superlattices

Abstract

Experimental results in InAs-GaSb superlattices are reviewed, focussing on the difference between this type of superlattice and that of GaAsGa1−xAlxAs. The emphasis is on electronic properties obtained from optical and magneto experiments, including semiconductor-semimetal transitions observed recently. The process of fabrication by molecular beam epitaxy and the characteristics of heterojunctions will also be briefly described. © 1980, All rights reserved.