T.C. Chen, E. Ganin, et al.
IEEE T-ED
Evidence is presented which indicates that positive oxide charge centers in thin films of thermally grown silicon dioxide are electron traps with an average capture cross section of 3±2×10-13 cm 2 at room temperature and at an average oxide field of about 7×105 V/cm. Positive charge centers of other origins are also expected to be electron traps with about the same capture cross section.
T.C. Chen, E. Ganin, et al.
IEEE T-ED
E. Ganin, T.C. Chen, et al.
IEDM 1990
D.D. Tang, G.P. Li, et al.
IEDM 1985
T.H. Ning, C.M. Osburn, et al.
Journal of Electronic Materials