Publication
Applied Physics Letters
Paper

Electron trapping at positively charged centers in SiO2

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Abstract

Evidence is presented which indicates that positive oxide charge centers in thin films of thermally grown silicon dioxide are electron traps with an average capture cross section of 3±2×10-13 cm 2 at room temperature and at an average oxide field of about 7×105 V/cm. Positive charge centers of other origins are also expected to be electron traps with about the same capture cross section.

Date

02 Sep 2008

Publication

Applied Physics Letters

Authors

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