About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact
Abstract
Ballistic constrictions are fabricated on a high-mobility Si/SiGe strained-layer heterostructure which exhibit conductance quantization in units of 4e2/h at T=4.2K. Under finite drain voltage a half-plateau develops at 2e2/h and a series of oscillations appear which enable us to extract the energy separation ΔEN+1,N between successive one-dimensional subbands. The result is ΔE2,1=2.0meV and ΔE3,2=1.4meV. © 2002 American Institute of Physics.