E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The electrical resistivity due to magnetic scattering in polycrystalline gadolinium has been determined in the temperature range between 4.2°K and 30°K. The part of the resistivity due to scattering by domains and magnetic impurities is practically independent of temperature, whereas that due to spinwave scattering follows above 10°K a T3.1±0.2 law and is considerably smaller than the resistivity due to phonon scattering. The temperature dependence of the latter varies between T3.5 and T3.8. © 1965.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
K.N. Tu
Materials Science and Engineering: A