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Physica A: Statistical Mechanics and its Applications
The published transport properties of carriers in silicon inversion layers suggest the existence of a mobility edge separating conducting from localized states at low temperature. Further experimental tests of the mobility-edge model are proposed. © 1974 The American Physical Society.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
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Surface Review and Letters
Robert W. Keyes
Physical Review B
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INFORMS 2021