About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE T-ED
Paper
Electromigration Lifetime Sudies of Submicrometer-Linewidth Al-Cu Conductors
Abstract
Electromigration in metal conductors used in VLSI circuits raises important concerns especially at submicrometer dimensions In this paper, we show that the current-carrying capability required in sub-micrometer MOS technology can be quite severe. We show experimentally that the mean time to fail for Al-Cu conductors increases as the linewidth decreases below about 2 μm and well into the submicrometer regime. Concomitant with this increase in the mean time to fail, there is an increase in {\sigma}, the spread of the failure distribution as well, leading to decreased reliability at early times for very narrow lines. Grain size and geometry are used to explain our results. Our studies also show that the applicability of an unenhanced “lift-off” defined Al-Cu metallurgy for submicrometer NMOS application needs careful examination. Copyright © 1984 by The Institute of Electrical and Electronics Engineers, Inc.