About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
VMIC 1990
Conference paper
Electromigration in a two-level Al-Cu interconnection with W studs
Abstract
Electromigration lifetime tests on single-level Al-Cu interconnection with straight and meandering lines and two-level Al-Cu interconnection with W stud chains have been carried out. The electromigration resistance of W stud chains was found to be less than half of that of Al-Cu straight lines. The discontinuity of Cu supply at Al-Cu/W interfaces accounts for most of the reduction in the electromigration resistance of W stud chains. The shorter electromigration lifetime in W stud chains and Al-Cu meandering lines as compared to Al-Cu straight lines reflects the effect of current crowding at studs.