Electroluminescence emission from indium oxide and indium-tin-oxide

Abstract

Electroluminescence emission from indium-tin-oxide (ITO) and indium oxide films incorporated in a Si-rich SiO2-SiO2-ITO (In 2O3) multiple-layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In 2O3. The intensity of the light is found to depend on the applied electric field.