L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
We studied the influence of π-orbital coupling in a 1D stack of 4,4′-biphenyldithiol (BDT) on the resulting electronic and electrical properties of the assembly. The conduction and the field-switching properties of the BDT assembly are compared as the intermolecular distances are reduced to below 4 Å. The system in the regime of strong π-interactions shows large conductance modulations upon application of a transverse gate field. The switching mechanism involves a delocalized π-resonance, i.e., resonant tunneling in the intermolecular π- and π*-bands of the BDT assembly. The transmission is found to be significantly higher in the π*-resonance. This behavior is discussed in terms of the density of states distribution in the conducting states.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
J.C. Marinace
JES
Hiroshi Ito, Reinhold Schwalm
JES