A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
A previous investigation revealed that during annealing at high temperatures a CoSi2/polysilicon bilayer breaks down, resulting in an inverted bilayer structure because of silicon grain growth and cobalt redistribution. The present paper is devoted to the electrical effects of the observed phenomena. MOS capacitors were subjected to heat treatments in the range 750-900°C prior to the evaluation of breakdown statistics. The electrical results were compared with Rutherford backscattering spectrometry. It is concluded that the effects on gate oxide integrity are slight and reproducible even after partial inversion of the bilayer structure. © 1993.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.A. Barker, D. Henderson, et al.
Molecular Physics
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry