Electrical characteristics of diodes fabricated in selective-epitaxial silicon wells

Abstract

The selective epitaxial growth of silicon using SiO2 as a mask is investigated in this work. The silicon films were deposited using SiCl4, H2 and HCl in an atmospheric reactor at 1050°C. The structural aspects and electrical characteristics of Schottky barrier and diffused PN diodes fabricated in silicon islands formed with the selective-epitaxial deposition technique are reported. The influence of substrate resistivity and reactive ion teching on the quality of the selective-epi is examined and found to have no effect on the electrical characteristics. Diodes fabricated inside selective-epitaxial silicon wells far from the edges of the wells have different characteristics than those that include the edges and these differences are discussed. © 1987.