J.C. Marinace
JES
The selective epitaxial growth of silicon using SiO2 as a mask is investigated in this work. The silicon films were deposited using SiCl4, H2 and HCl in an atmospheric reactor at 1050°C. The structural aspects and electrical characteristics of Schottky barrier and diffused PN diodes fabricated in silicon islands formed with the selective-epitaxial deposition technique are reported. The influence of substrate resistivity and reactive ion teching on the quality of the selective-epi is examined and found to have no effect on the electrical characteristics. Diodes fabricated inside selective-epitaxial silicon wells far from the edges of the wells have different characteristics than those that include the edges and these differences are discussed. © 1987.
J.C. Marinace
JES
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures