Efficient electroluminescence from inp diodes grown by liquid-phase epitaxy

Abstract

Light-emitting InP diodes were made by liquid-phase epitaxy. The most efficient diodes result when the n-type layers are grown from a Sn-doped melt, while the p-type layers are grown from the same melt, but overcompensated with Zn. External quantum efficiencies up to 0.75% at room temperature and 11.7% at 77°K were observed in uncoated diodes. Threshold current densities for stimulated emission were as low as 750 A/cm2 at 77°K. Spontaneous emission can be observed normal to the p-n junction. © 1970 The American Institute of Physics.