Conference paper
Material development of SIMOX with a thin box
D.K. Sadana, H.J. Hovel, et al.
IEEE International SOI Conference 1993
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater. © 1977 IEEE. All rights reserved.
D.K. Sadana, H.J. Hovel, et al.
IEEE International SOI Conference 1993
H.J. Hovel, C. Lanza
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