EFFECTS OF MeV IMPLANTATION ON THE CHARACTERISTICS OF p-n JUNCTIONS.

Abstract

The authors studied the effects of MeV phosphorous implantation and subsequent process steps on the electrical characteristics of p-n junctions. The observed forward and reverse I-V characteristics can be explained by the spatially localized defects induced by the high-energy implantation. The device characteristics are affected only when the depletion layer reaches the damaged region.