I. Ohdomari, K.N. Tu
Journal of Applied Physics
We performed Hall-effect measurements as a function of temperature on lightly doped polysilicon films. The range of boron concentration encompassed a mobility minimum and a corresponding barrier height maximum. Upon plasma hydrogenation, these two extrema shifted to a lower concentration, clearly indicating a passivating effect. Spin resonance measurements on intrinsic films showed a reduction in unpaired spins after plasma hydrogenation. Desorption experiments confirmed the presence of hydrogen in the plasma treated samples.
I. Ohdomari, K.N. Tu
Journal of Applied Physics
I. Ohdomari, K. Suguro, et al.
Thin Solid Films
E.I. Alessandrini, D.R. Campbell
JES
I. Ohdomari, M. Akiyama, et al.
Journal of Applied Physics