Publication
Journal of Applied Physics
Paper

Parallel silicide contacts

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Abstract

Parallel silicide contacts consisting of PtSi and NiSi with fixed ratios of contact areas were prepared for current-voltage and capacitance-voltage measurements of Schottky barrier height. These measurements were analyzed with models assuming a linear combination of thermionic emission currents or junction capacitances. The measured and the computed values of barrier height have been found to agree very well. A systematic diagnosis of parallel contacts under a variety of conditions is presented in the Appendix.

Date

09 Jul 2008

Publication

Journal of Applied Physics

Authors

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