EFFECT OF CONTACTS ON ADVANCED BIPOLAR DEVICE CHARACTERISTICS.

Abstract

One of the concerns in polysilicon contact technology is the potentially large series contact resistance due to interfacial layers. Such interfacial layer is of course a function of the process details. Potential problems due to interfacial layers can be monitored by monitoring the emitter series resistance, which can be determined from the measured I-V characteristics. Results show that polysilicon emitter contacts can be made with acceptably low emitter series resistance.