Publication
Microelectronic Engineering
Paper

Dry ridge etching of AlGaAs GRINSCH lasers

View publication

Abstract

Optical confinement properties of AlGaAs GRINSCH ridge lasers are sensitive to the width and the depth of the ridge. Optimum waveguide confinement requires excellent control during the ridge etch. This paper describes a Cl2 reactive ion etching process and its associated endpoint technique which achieves such process control. © 1990.

Date

01 Jan 1990

Publication

Microelectronic Engineering

Authors

Topics

Share