Publication
Applied Physics Letters
Paper

Doping effects in reactive plasma etching of heavily doped silicon

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Abstract

Etch rates of heavily doped silicon films (n and p type) and undoped polycrystalline silicon film were studied during plasma etching and also during reaction ion etching in a CF4/O2 plasma. The etch rate of undoped Si was lower than the n+-Si etch rate, but higher than the p+-Si etch rate, when the rf inductive heating by the eddy current was minimized by using thermal backing to the water-cooled electrode. This doping effect may be explained by the opposite polarity of the space charge present in the depletion layer of n+-Si and p+-Si during reactive plasma etching.

Date

01 Jan 1985

Publication

Applied Physics Letters

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