IEDM 2006
Conference paper

Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOS

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Two integration schemes for hybrid crystal orientation technology using direct silicon bonded (DSB) substrates and solid phase epitaxay (SPE) processes have been implemented. The shallow-trench-isolation (STI) before SPE approach suffers from trench-edge defects formed at STI edges, which causes high leakage current. The SPE-before-STI approach allows removal of edge defects of SPE by STI. SRAM in 65nm node and eDRAM in 90nm node have been demonstrated on DSB using the SPE-before-STI scheme.