Steven E. Laux, M.V. Fischetti
IEEE Electron Device Letters
Vacuum-emission and carrier-separation techniques, together with novel metal-oxide-semiconductor structures, have been used to observe the threshold field for the onset of electron heating in silicon dioxide. The magnitude of this electric field is 1.5-2.0 MV/cm, independent of oxide thickness and composition. This value is consistent with all of the current theoretical calculations. A minimum average electronic energy of 1.0 eV is shown to be necessary to observe emission of the electrons into vacuum. © 1986 The American Physical Society.
Steven E. Laux, M.V. Fischetti
IEEE Electron Device Letters
P.C. Arnett, D.J. Dimaria
Journal of Applied Physics
C. Sheraw, M. Yang, et al.
VLSI Technology 2005
D.A. Buchanan, M.V. Fischetti, et al.
Applied Surface Science