J.H. Stathis, J. Chapple-Sokol, et al.
Applied Physics Letters
Vacuum-emission and carrier-separation techniques, together with novel metal-oxide-semiconductor structures, have been used to observe the threshold field for the onset of electron heating in silicon dioxide. The magnitude of this electric field is 1.5-2.0 MV/cm, independent of oxide thickness and composition. This value is consistent with all of the current theoretical calculations. A minimum average electronic energy of 1.0 eV is shown to be necessary to observe emission of the electrons into vacuum. © 1986 The American Physical Society.
J.H. Stathis, J. Chapple-Sokol, et al.
Applied Physics Letters
M.V. Fischetti
Physical Review B - CMMP
M.V. Fischetti, S.E. Laux
Journal of Applied Physics
P. Solomon, D.J. Dimaria
Journal of Applied Physics