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Internal photoemission characteristics from the Al-SiO2 interface are markedly affected by a 400 °C 20 min forming gas (90% N 2 and 10% H2) anneal. The barrier height is raised by about 0.25 eV and the electric field dependence of the photocurrent is increased.
K.W. Guarini, P. Solomon, et al.
Technical Digest-International Electron Devices Meeting
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