Charge trapping & NBTI in high k gate dieectric stacks
Sufi Zafar, A.C. Callegari, et al.
ECS Meeting 2005
We have observed an electron paramagnetic resonance signal corresponding to a neutral fourfold coordinated nitrogen in plasma-enhanced chemical vapor deposited SiO2 films fabricated under certain conditions. The same films contain E' centers (positive oxygen vacancies) in an equal quantity. Our data support a model in which these two paramagnetic centers are created simultaneously by an electron transfer, starting from a positive fourfold nitrogen and a neutral oxygen vacancy. This model allows an earlier observation of an apparently neutral E' variant to be interpreted as a normal positive E' plus a nitrogen center to conserve charge.
Sufi Zafar, A.C. Callegari, et al.
ECS Meeting 2005
Ernest Y. Wu, B. Li, et al.
IEDM 2013
E. Cartier, Andreas Kerber, et al.
IEDM 2011
B.P. Linder, D.J. Frank, et al.
VLSI Technology 2001