Device Implications of the Electronic Effect in the Elastic Constants of Silicon

Abstract

The effect of heavy doping on the elastic constants of silicon is well-established. The following device implications of this effect are discussed: (1) Contrast between heavily doped and lightly doped regions in acoustic microscopy; (2) change of velocity and temperature dependence of velocity of Rayleigh waves with doping; (3) existence of Love waves in the presence of a heavily doped surface layer; (4) interaction of surface waves with electrons controlled by a metal-oxide semiconductor (MOS) structure; (5) determination of the carrier concentration from thermodynamic, rather than transport, properties. Copyright © 1982 by The Institute of Electrical and Electronics Engineers, Inc.