Publication
IEEE T-ED
Paper

High-Mobility FET in Strained Silicon

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Abstract

Suitably strained silicon exhibits a mobility anisotropy that can be used to advantage in field-effect transistors. The desired strain can be achieved through heteroepitaxy. Copyright © 1986 by The Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1986

Publication

IEEE T-ED

Authors

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