J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Paper
Electronic effect on the debye temperature of N-type silicon
Abstract
Analysis of recently published measurements of the specific heat of heavily doped n-type silicon reveals a dependence of the Debye temperature on doping. © 1978.
Related
Hiroshi Ito, Reinhold Schwalm
JES
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials